This technology uses an avalanching nanoparticle optical conversion layer to enable SWIR imaging with a conventional silicon-based camera.
Short-wave infrared (SWIR) photodetector materials, including InGaAs semiconductors and colloidal quantum dots, have expanded imaging capabilities in semiconductor manufacturing, agriculture, and healthcare. However, current SWIR technologies may be limited by high dark current and noise, low quantum efficiency, environmental instability, complex integration, costly fabrication, or cooling requirements. Therefore, SWIR detection technologies that combine high sensitivity, low noise, environmental stability, and simple fabrication are needed to improve the performance and accessibility of SWIR imaging.
This technology uses rare-earth-doped avalanching nanoparticles as an optical conversion layer to enable SWIR imaging with a silicon-based camera. The nanoparticles convert incoming SWIR light into shorter-wavelength emission detectable by silicon, while an infrared seed laser enhances sensitivity and response time. By leveraging commercially available silicon imagers, the technology reduces fabrication complexity, detector noise, and cooling requirements compared with conventional SWIR imaging systems.
Patent Pending(US18/934,975)
IR CU24019
Licensing Contact: Greg Maskel
