This technology is a method enabling the selective and defect-free p-type doping of next-generation semiconductors at room temperature.
Current methods of semiconductor doping involve the insertion of specific impurities (dopants) into the crystalline lattice of the semiconductor at high temperatures. When employing these methods, it is common for damage and defect states to arise in the semiconductor due to the dopant material not being fully incorporated into the crystalline lattice of the semiconductor. Additionally, conventional dopants may undergo a process known as carrier freezeout, which causes them to become inactive at normal operating conditions. Thus, there remains the need for the development of a universal doping technique that facilitates the controlled insertion of dopant materials.
This technology facilitates the highly controlled incorporation of dopants in semiconductors at low temperatures. Thin layers of tungsten oxide (WOx) have been successfully deposited onto a variety of semiconductors using a room temperature process involving exposure to ultraviolet light and ozone. This gentle and patternable technique allows for the development of semiconductors that are stable and highly active under typical operating conditions. As such, this thin layer deposition technique can be employed to efficiently functionalize emerging materials proposed for semiconductor applications.
This technology has been demonstrated to be an effective doping technique for carbon nanotubes, graphene and WSe2. The resulting semiconductors have been shown to be stable for at least 1 month and active at temperatures as low as 1.5 K.
Patent Pending
IR CU20134
Licensing Contact: Greg Maskel