Polycrystalline silicon thin film transistors used in active matrix liquid crystal display devices are produced by melting and recrystallization of amorphous silicon. However, the boundaries between silicon crystal grains created during annealing reduce electron mobility, thereby increasing electrical resistance and reducing efficiency. This technology uses an excimer laser annealing method with multiple laser tubes to increase silicon crystal grain size. The larger grain sizes increase electron mobility, improve the performance of silicon thin film transistors, and enable the production of higher quality displays in electronic devices.
This technology efficiently produces high performance thin film transistors with large grain size using excimer laser annealing. By using multiple laser tubes, this technology achieves higher energy densities than conventional excimer laser annealing. As a result, fewer laser pulses are required for annealing, resulting in the formation of large grain crystal silicon thin films. With reduced electrical resistance and increased electron mobility afforded by large grain crystals, this technology can produce high performance thin film transistors for a multitude of electronic applications.
Patent Pending
Tech Ventures Reference: IR CU14160