Name of the inventor: Wen I Wang
Semiconductor Quantum Well Device: Heterojunction diode laser, in which the quantum well layer is InGaAsN grown in the presence of antimony.
The method for fabricating a semiconductor quantum well device involves forming a first layer of semiconductor material. A quantum well layer of InGaAsN is formed on the first layer of semiconductor material in the presence of Sb (antimony) with negligible incorporation of Sb in the quantum well layer. A second layer of semiconductor material is formed wherein the semiconductor materials of the first layer and second layer each has a wider band gap than the InGaAsN of the quantum well layer.
Fabricating Semiconductor Material:
A quantum well pseudomorphic high electron mobility transistor having a relatively thick undoped buffer layer, with GaAs grown on a semi-insulating substrate is provided.