Synthesis method for high purity graphene

This technology is a chemical vapor deposition method for synthesizing ultra-high purity graphene with high mechanical strength and electrical performance.

Unmet Need: Controllable and scalable synthesis of high purity graphene

Chemical vapor deposition (CVD) is a common technique for synthesizing graphene. Current CVD methods are not well-controlled, resulting in contamination during the synthesis process and suboptimal electrical performance of the resultant graphene. Improved CVD methods are necessary to enable large-scale synthesis of graphene with attractive electrical, optical, and magnetic properties.

The Technology: CVD method for controlled synthesis of ultra-high purity graphene

This technology is a chemical vapor deposition method for synthesizing high purity graphene in a controlled manner. Atmospheric contamination is minimized through improvements to critical hardware connections, and potential user error is avoided through automated controls. This system provides a faster and lower temperature synthesis method for generating graphene with higher purity and potentially improved electrical performance.

Applications:

  • Industrial manufacturing method for graphene films
  • Research tool for studying graphene growth and nucleation
  • Model for synthesizing heterostructure devices
  • Solar cell fabrication

Advantages:

  • Improved graphene purity
  • Faster and lower temperature synthesis
  • Automated controls
  • Reproducible technique

Lead Inventor:

James Hone, Ph.D.

Related Publications:

Tech Ventures Reference:

Quick Facts:
Tags
Chemical vapor depositionGrapheneHeterojunctionNucleationSolar cell
Inventors
Christopher DiMarcoJames Hone
Manager
Dovina Qu
Departments
Mechanical Engineering
Divisions
Fu Foundation School of Engineering andFu Foundation School of Engineering and Applied Science (SEAS)
Reference Number
CU21336
Release Date
2021-05-26