This technology is a method of synthesizing light-emitting quantum dots using III-V semiconductor materials.
Cadmium-free quantum dots must be developed to safely integrate quantum dots into lighting and display technologies. Indium phosphine (InP) is less toxic than cadmium, but InP-based quantum dots typically suffer from broad emission linewidths and poor performance. A method of synthesizing InP-based quantum dots with precise control over size, shape and monodispersity is necessary to achieve narrow linewidths and improve performance.
This technology is a method of precisely controlling the size and structure of quantum dots made from III-V semiconductor materials. The technology consists of a core-shell geometry, where the light-emitting region consists of InxGa1-XP, followed by a passivation region to produce monodisperse quantum dots with narrow emission spectra. This technology may improve the safety and quality of quantum dots used in lighting and display applications.
IR CU19416
Licensing Contact: Greg Maskel