This technology is an ultrathin van der Waals semiconductor platform for terahertz (THz) emission and ultrabroadband detection that enables high-speed and high-resolution communications, sensing, and imaging.
Current technology for THz emission and detection is constrained by small bandwidth and low detection sensitivity, where unfavorable absorption of THz radiation and mismatched electro-optic properties remain limiting factors. Existing crystals for THz spectroscopy, such as GaP, require thick 200-micron sheets and face challenges with integration into micrometer-scale technologies such as on-chip systems. There is a critical need for lightweight, ultrathin electro-optic materials that can achieve both near- and far-field THz detection with high sensitivity for applications in spectroscopy, communications, security, and diagnostic sensing.
This technology uses ultrathin flakes of a ferroelectric van der Waals semiconductor as a compact terahertz emission and detection platform. The combination of sub-micron sheet thickness and very high electro-optic coefficients enables both sub-diffraction and ultrabroadband applications ranging from 0 to 15 THz. These flakes can be integrated with other 2D materials to achieve enhanced THz-based imaging with micrometer special resolution, overcoming the far-field diffraction limit of THz radiation. The stackable nature of these flakes is especially suitable for on-chip applications and integration into thin-film technologies.
Patent Pending
IR CU26078, CU25038
Licensing Contact: Dovina Qu
