Hybrid silicon film crystallization method for large panels and higher performance

This technology describes a method of using high velocity continuous wave (CW) laser scans along with sequential lateral solidification (SLS) to crystalize large panels of silicon films.

Unmet Need: Rapid and high-speed crystallization of film on large panel areas

Current, CW laser crystallization may be used to produce surface-texted silicon films. However, CW crystallization requires multiple scans and can introduce significant heat, damaging the glass substrate. CW laser scanning can be optimized at a velocity of 1 m/s, but does not serve as a feasible method for large panel area scans. A hybrid solution of CW laser and SLS has been tested. However, pre-crystallization of entire film panels is time consuming and limited by the power of the laser used in CW.

The Technology: Hybrid continuous wave and sequential lateral solidification crystallization method

This technology describes a method of typical SLS scanning at higher velocities by varying its directional scanning. Multiple high-speed CW scans over a narrow integration region of a liquid crystal display (LCD) will produce a strong crystalline surface texture without substrate damage. Further, SLS can be used to optimize the film’s surface structure to further enhance thin-film transistor (TFT) performances. Overall, this technique will allow CW scans at high velocities compatible with glass substrates over a large panel and offers higher performance of TFTs in its integration regions.

Applications:

  • Production of high performance TFTs and LCDs from glass
  • Rapid and optimized crystallization process
  • Production method for imaging sensors and LCDs

Advantages:

  • Uses high velocities scans and lower costs due to optimization
  • Reduces substrate heating from multiple scans
  • Scans over larger panel areas
  • Improves TFT performance in LCDs
  • Compatible with glass substrates

Lead Inventor:

James Im, Ph.D.

Patent Information:

Patent Status

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