This technology describes a method of using high velocity continuous wave (CW) laser scans along with sequential lateral solidification (SLS) to crystalize large panels of silicon films.
Current, CW laser crystallization may be used to produce surface-texted silicon films. However, CW crystallization requires multiple scans and can introduce significant heat, damaging the glass substrate. CW laser scanning can be optimized at a velocity of 1 m/s, but does not serve as a feasible method for large panel area scans. A hybrid solution of CW laser and SLS has been tested. However, pre-crystallization of entire film panels is time consuming and limited by the power of the laser used in CW.
This technology describes a method of typical SLS scanning at higher velocities by varying its directional scanning. Multiple high-speed CW scans over a narrow integration region of a liquid crystal display (LCD) will produce a strong crystalline surface texture without substrate damage. Further, SLS can be used to optimize the film’s surface structure to further enhance thin-film transistor (TFT) performances. Overall, this technique will allow CW scans at high velocities compatible with glass substrates over a large panel and offers higher performance of TFTs in its integration regions.
IR M06-028
Licensing Contact: Greg Maskel