This technology is a technique for optimizing SBC to inexpensively produce high-quality silicon films with uniform, small grain sizes that can be used for next generation electronic devices.
High-quality silicon films with small and uniform crystal grain size are needed for next-generation electronic devices, such as virtual reality displays. Current methods of laser crystallization can produce films with relatively uniform grain sizes of about 0.3 to 3.0 microns, which are sufficient for displays and mobile devices requiring around 300 to 500 pixels per inch. However, next-generation devices, including devices used for virtual reality viewing, require far higher pixel density (on the order of thousands of pixels per inch) to produce quality images. Existing methods cannot produce crystallized films with optimal uniformity for next generation electronic devices, are inefficient, and require expensive, specialized equipment, highlighting the need for further development.
This technology is an optimized SBC method that continuously translates a laser beam across a film, creating a sustained molten zone that, when solidified, forms uniform, large- or small-grained crystalline structures. The beam can mimic a line beam by having the spot scanned right into one direction, and the spot beam location can be obtained using a rotating polygon where the beam hits the polygon. As the polygon rotates, the beam can sweep from one position on the film to another. Compared to traditional crystallization methods, this technology enables the production of higher quality silicon thin films with lower energy demands and higher processing efficiency.
IR CU18186, CU19037
Licensing Contact: Greg Maskel