This technology is a surface treatment process using organofluorine reagents to passivate the surfaces of III-V compound semiconductors, increasing the photoluminescent quantum yield of quantum dots.
Current method to increase the optoelectronic properties of quantum dots (QDs) involve using toxic compounds containing fluoride, such as hydrofluoric acid or ammonium fluoride to eliminate deep surface traps and remove surface dangling bonds or oxidation layers. Although this method achieves the desired surface properties of QDs, the chemicals involved are very hazardous and life-threatening.
This technology describes methods for treating III-V QDs with organofluorine reagents to increase the photoluminescent quantum yield (PLQY) of QDs. These methods use reagents that are non-toxic, easy to handle, and inexpensive, to sufficiently remove trap states that reduce the PLQY. As such, this technology has the potential to safely increase the effectiveness of III-V quantum dots.
IR CU22169
Licensing Contact: Greg Maskel