Structure and method of synthesizing tunable light-emitting quantum dots

This technology is a method of synthesizing light-emitting quantum dots using III-V semiconductor materials.

Unmet Need: Cadmium-free quantum dots with narrow emission spectra

Cadmium-free quantum dots must be developed to safely integrate quantum dots into lighting and display technologies. Indium phosphine (InP) is less toxic than cadmium, but InP-based quantum dots typically suffer from broad emission linewidths and poor performance. A method of synthesizing InP-based quantum dots with precise control over size and shape is necessary to achieve narrow linewidths and improve performance.

The Technology: Structure and fabrication of tunable III-V quantum dots

This technology is a method of precisely controlling the size and structure of quantum dots made from III-V semiconductor materials. The technology consists of a core-shell geometry, where the light-emitting region consists of one or more group III elements and one or more group V elements followed by a passivation region to produce monodisperse quantum dots with narrow emission spectra. For example, the light emitting region may consist of In_xGa_1-XP. This technology may improve the safety and quality of quantum dots used in lighting and display applications.

Applications:

• Light-emitting diodes (LEDs)
• Digital displays
• Indoor lighting
• Research tool for synthesis of quantum dots

Advantages:

• Cadmium-free
• Tunable
• Efficient emission of radiation
• Narrow emission linewidths

Lead Inventor:

Jonathan Owen, Ph.D.

Patent Information:

Patent Pending (DE112020003015)

Related Publications:

• McMurtry BM, Qian K, Teglasi JK, Swarnakar AK, De Roo J, Owen JS. “Continuous nucleation and size dependent growth kinetics of indium phosphide nanocrystals” Chem Mater. 2020 May 26; 32(10): 4358-4368.

Tech Ventures Reference:

• IR CU19416

• Licensing Contact: Greg Maskel